拉曼光譜在石墨烯結構表征中的應用
吳娟霞a,b, 徐華a, 張錦a
a beat365納米化學研究中心 beat365官方网站 北京 100871;
b beat365前沿交叉學科研究院 北京 100871
Raman Spectroscopy of Graphene
Wu Juanxia a,b, Xu Huaa, Zhang Jina
a Center for Nanochemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871;
b Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871
摘要
石墨烯是sp2碳原子緊密堆積形成的二維原子晶體結構，因其獨特的結構與性質引起了科學家們的廣泛關注. 拉曼光譜是一種快速而又簡潔的表征物質結構的方法. 主要綜述了拉曼光譜技術在石墨烯結構表征中應用的一些最新進展. 首先，在系統分析石墨烯聲子色散曲線的基礎上介紹了石墨烯的典型拉曼特征（G’峰、G峰和D峰），讨論了G’峰、G峰和D峰在石墨烯層數的指認和石墨烯邊緣與缺陷态分析中的應用；然後，通過對石墨烯拉曼G峰和G’峰的峰位、峰型以及強度的分析，讨論了石墨烯的層間堆垛方式、摻雜、基底、溫度和應力等對石墨烯的電子能帶結構的影響；最後，介紹了石墨烯中的二階和頻與倍頻拉曼特征以及石墨烯的低頻拉曼特征（剪切和層間呼吸振動模），并讨論了其對石墨烯結構的依賴性.
關鍵詞 ： 石墨烯, 拉曼光譜, 層數依賴性, 堆垛效應, 和頻與倍頻, 低頻振動模
Abstract：
Graphene, a monolayer of carbon atoms packed into a two-dimensional crystal structure, attracted intense attention owing to its unique structure and optical, electronic properties. Raman spectroscopy is a quick and precise method in material science and has been employed for many years to investigate material properties. It can be used to investigate the electronic band structure, the phonon energy dispersion and the electron-phonon interaction in graphene systems. In probing graphene's properties, Raman spectroscopy is considered to be a reliable method. In this review, we highlight recent progress of studying graphene structure using Raman spectroscopy. First, on the basis of systematically analyzing the phonon dispersion of graphene, the typical Raman scattering features of graphene, such as G band, G' band, and D band, and the basic physical process are introduced. Using these Raman fingerprints, we can quickly and directly distinguish the layer thickness of graphene, determine the edge chirality and monitor the type and density of defects in graphene. Second, stacking disorder will significantly modify the optical properties and interlayer coupling stretch of few-layer graphene so that the Raman features of graphene will be strongly influenced not only in the G band intensity but also in the intensity, lineshape and the frequency of G' band. According to the peak position, width, and intensity of the Raman G band and G' band in graphene, we also discuss the influence of doping, substrate, temperature, and strain on the electronic structure of graphene. Finally, we introduce the second order overtone and combination Raman modes and the low frequency Raman feature (shear and layer breathing mode) in graphene, and discuss the dependence of these peaks on the structure of graphene.
Key words： graphene Raman spectroscopy layer dependence stacking effect overtone and combination mode low frequency mode
http://sioc-journal.cn/Jwk_hxxb/CN/abstract/abstract343669.shtml
